Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth

A scalable, self-aligned In_0.53Ga_0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 mum L_g device shows a maximum drive current of 0.14 mA/mum at V_gs=4.0 V and V_ds=2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al₂O₃ (~2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.