DocumentCode :
1716354
Title :
Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications
Author :
Tang, Chak Wah ; Li, Haiou ; Zhong, Zhenyu ; Ng, Kai Lun ; Lau, Kei May
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
fYear :
2009
Firstpage :
136
Lastpage :
139
Abstract :
Device quality Al0.49In0.51As/Ga0.47In0.53As MHEMT structures have been grown by MOCVD on GaAs substrates, with 2-DEG mobility over 8700 cm2/V-s and sheet carrier density at around 4 times 1012 cm-2. A 150 nm T-gate transistor demonstrated unity current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of 279 and 231 GHz, respectively.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; carrier density; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor heterojunctions; two-dimensional electron gas; 2-DEG mobility; Al0.49In0.51As-Ga0.47In0.53As-GaAs; GaAs; MHEMT structures; MOCVD growth; T-gate transistor; carrier density; current gain cutoff frequency; device application; frequency 231 GHz; frequency 279 GHz; hetero-epitaxy III-V compounds; maximum oscillation frequency; Charge carrier density; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium phosphide; MOCVD; Surface morphology; Temperature; Wet etching; mHEMTs; AlInAs/GaInAs; LT buffer; MHEMTs; MOCVD; Metamorphic HEMT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012460
Filename :
5012460
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1716354
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