Research on Parametric Drift in ESD-injected Silicon Dynatron Transistors

Currently, with the extensive application of electronic devices and systems, the interests in ESD failure in electronic devices had mushroomed rapidly. There were many approaches to analysis static failures. The electronic parametric measurement was the most common approach for parts detection. With high-frequency low-noise Silicon dynatron transistors, in order to find the most sensitive parameter of ESD damage/failure, nearly all the normal electrical characteristics were measured and compared before and after ESD injection. By statistic and analysis, it was observed that saturation falloff, forward break-over voltage, correlated power gain, noise figure and junction capacitance were not sensitive to ESD, reverse breakdown voltages and cutoff currents were more sensitive. Especially, V_BRCEO and I_CEO of high-frequency low-noise Silicon dynatron transistors were the most sensitive to ESD injection.