DocumentCode
1716453
Title
Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes
Author
Pan, Huapu ; Beling, Andreas ; Chen, Hao ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA
fYear
2009
Firstpage
147
Lastpage
148
Abstract
The third-order intercept point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; InGaAs-InP; flat frequency response; frequency 20 GHz; partially-depleted-absorber photodiode; reduced frequency dependence; third order nonlinearities; third-order intercept point; Capacitance measurement; Doping profiles; Equivalent circuits; Frequency dependence; Frequency measurement; Frequency response; Indium gallium arsenide; Indium phosphide; Photodiodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012463
Filename
5012463
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