• DocumentCode
    1716505
  • Title

    Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

  • Author

    Inada, H. ; Miura, K. ; Nagai, Y. ; Tsubokura, M. ; Moto, A. ; Iguchi, Y. ; Kawamura, Y.

  • Author_Institution
    Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Osaka
  • fYear
    2009
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    For sensing short wavelength infrared (SWIR) region (1.0-2.5 mum), photodiodes with In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structure grown on InP substrate by solid source molecular beam epitaxy (MBE), were successfully fabricated. Low dark current was obtained by improving GaAsSb crystalline quality.
  • Keywords
    III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor quantum wells; In0.53Ga0.47As-GaAs0.5Sb0.5; MBE; SWIR photodiode; dark current; infrared wavelength; solid source molecular beam epitaxy; type II quantum well structure; Absorption; Buffer layers; Dark current; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photodiodes; Substrates; Technological innovation; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-3432-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2009.5012464
  • Filename
    5012464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1716505