DocumentCode :
1716505
Title :
Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate
Author :
Inada, H. ; Miura, K. ; Nagai, Y. ; Tsubokura, M. ; Moto, A. ; Iguchi, Y. ; Kawamura, Y.
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Osaka
fYear :
2009
Firstpage :
149
Lastpage :
152
Abstract :
For sensing short wavelength infrared (SWIR) region (1.0-2.5 mum), photodiodes with In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structure grown on InP substrate by solid source molecular beam epitaxy (MBE), were successfully fabricated. Low dark current was obtained by improving GaAsSb crystalline quality.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor quantum wells; In0.53Ga0.47As-GaAs0.5Sb0.5; MBE; SWIR photodiode; dark current; infrared wavelength; solid source molecular beam epitaxy; type II quantum well structure; Absorption; Buffer layers; Dark current; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photodiodes; Substrates; Technological innovation; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012464
Filename :
5012464
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1716505
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