Title :
An inductively Gm enhanced 34-GHz VCO with gain linearization and switched transformer tuning
Author :
Sah, Suman P. ; Deukhyoun Heo ; Mirabbasi, Shahriar
Author_Institution :
Dept. of EECS, Washington State Univ., Pullman, WA, USA
Abstract :
This paper presents a Gm-enhanced low power high-frequency voltage-controlled oscillator (VCO). Transconductance enhancement by a factor of 3 is achieved by means of modified cross-coupled pair with coupled inductors. Low flicker noise corner is obtained using a varactor linearization technique. Furthermore, a switched-transformer method is used to extend the tuning range. Output loading is decoupled from the tank by tapping the output at the gate of cross-coupled pair, thus improving the phase noise performance and achieving a higher output power. A proof-of-concept prototype VCO is implemented in a 65-nm CMOS process. The chip occupies only 285 × 130 μm2. The VCO draws 2.6 mA from a 1 V supply and achieves a linear tuning range of over 110 MHz centered at 34.55 GHz. The measured phase noise of the VCO over its tuning range is from -91 to -94.7 dBc/Hz (1 MHz offset) which results in a figure-of-merit (FoM) of -181 to -177 dBc/Hz.
Keywords :
CMOS integrated circuits; circuit tuning; field effect MIMIC; flicker noise; linearisation techniques; low-power electronics; millimetre wave oscillators; phase noise; transformers; voltage-controlled oscillators; CMOS technology; VCO; current 2.6 mA; flicker noise; frequency 34 GHz; gain linearization; low power high-frequency voltage-controlled oscillator; phase noise; size 65 nm; switched transformer tuning; transconductance enhancement; tuning range; varactor linearization; voltage 1 V; Abstracts; Indexes; Loading; Topology; Tuning; Varactors; Voltage-controlled oscillators; CMOS; Gm-enhanced; PLL; VCO; VCO gain;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848633