• DocumentCode
    171656
  • Title

    Analysis of contacts configurations of HEMT with ID-VDS curve measurments

  • Author

    Wang, S.H. ; Tsai, C.C. ; Chang, C.W. ; Wang, H.Y. ; Sun, Yue ; Lin, H.K. ; Tu, L.W.

  • Author_Institution
    Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2014
  • fDate
    25-27 April 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The characteristic of ID-VDS curve is related by applying voltages to Schottky gate in AlGaN/GaN HEMTs. The measurement of drain and source resistances shown that the current increase was caused by inducing the 2DEG charge between drain and source electrodes. In this study, we evaporate different configurations of contacts to analyze its ID-VDS characteristics.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; biological techniques; electric current measurement; gallium compounds; high electron mobility transistors; two-dimensional electron gas; voltage measurement; 2DEG charge; AlGaN-GaN; AlGaN-GaN HEMT; ID-VDS curve measurments; Schottky gate; contact configurations; drain electrodes; drain measurement; source electrodes; source resistances; Aluminum gallium nitride; Biomedical measurement; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaN/GaN HEMTs; ID-VD characteristic; contacts configurations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bioengineering Conference (NEBEC), 2014 40th Annual Northeast
  • Conference_Location
    Boston, MA
  • Type

    conf

  • DOI
    10.1109/NEBEC.2014.6972967
  • Filename
    6972967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=171656