Title :
Sub-MMW active integrated circuits based on 35 nm InP HEMT technology
Author :
Lai, R. ; Deal, W.R. ; Radisic, V. ; Leong, K. ; Mei, X.B. ; Sarkozy, S. ; Gaier, T. ; Samoska, L. ; Fung, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
Abstract :
In this paper, we present the latest advancements of active sub-MMW integrated circuits (S-MMIC) based on 35 nm InP HEMT technology. The current state-of-the-art results include the first demonstrated LNA, PA and fundamental oscillator modules above 300 GHz.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave integrated circuits; HEMT technology; InP; fundamental oscillator modules; state-of-the-art; submillimeter active integrated circuits; Fingers; HEMTs; Indium phosphide; Integrated circuit technology; Oscillators; Probes; Size measurement; Space technology; Submillimeter wave integrated circuits; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012474
