Title :
Manufacturable tri-stack AlSb/INAS HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications
Author :
Chou, Y.C. ; Chang-Chien, P. ; Yang, J.M. ; Nishimoto, M.Y. ; Hennig, K. ; Lange, M.D. ; Zeng, X. ; Parlee, M.R. ; Lin, C.H. ; Lee, L.S. ; Nam, P.S. ; Wojtowicz, M. ; Barsky, M.E. ; Oki, A.K. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
Abstract :
A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; indium compounds; low noise amplifiers; phase shifters; power amplifiers; power semiconductor switches; wafer level packaging; AlSb-InAs; HEMT receivers; compact tristack transmit-receive module; light-weight applications; phase shifters; power amplifiers; switches; tristack HEMT low-noise amplifier manufacture; ultralow-power applications; wafer-level-packaging technology; Cutoff frequency; Electron mobility; Gallium arsenide; HEMTs; Low-noise amplifiers; Manufacturing; Metallization; Molecular beam epitaxial growth; Power dissipation; Substrates; AlSb/InAs; HEMT; ultralow-power; wafer-level-packaging;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012478
