InGaAs/InAlAs/InP power hemt with an improved ohimc contact and an extremely high operating voltage

Author

Mei, X.B. ; Farkas, D. ; Luo, W.B. ; Lin, C.H. ; Lee, L.J. ; Liu, W. ; Liu, P.H. ; Cavus, A. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA

fYear

2009

Firstpage

204

Lastpage

206

Abstract

An InGaAs/InAlAs/InP HEMT has been fabricated with 0.15 mum EBL gate, double gate recess and improved Ohmic contact. While maintaining a peak transconductance (Gmp) in excess of 1000 mS/mm, an onstate burnout voltage exceeding 8 V and an operating drain voltage of 5 V have been achieved. A loadpull measurement at 40 GHz was conducted. An output power density of 471 mW/mm, a power-added efficiency of 38% and a power gain of 8 dB were demonstrated, making this technology attractive for power applications at millimeter wave frequencies.

Keywords

aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; InGaAs-InAlAs-InP; drain voltage; high electron mobility transistors; loadpull measurement; millimeter wave frequencies; ohmic contact; power HEMT; power density; size 0.15 mum; transconductance; voltage 5 V; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Millimeter wave technology; Ohmic contacts; Power generation; Transconductance; Voltage; High electron mobility transisters (HEMT); InGaAs/InAlAs/InP; Ohmic contact; breakdown voltage; double recess; output power (Pout); power amplifier (PA); power-added efficiency (PAE);

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012479

Filename

5012479