Title :
InGaAs/InAlAs/InP power hemt with an improved ohimc contact and an extremely high operating voltage
Author :
Mei, X.B. ; Farkas, D. ; Luo, W.B. ; Lin, C.H. ; Lee, L.J. ; Liu, W. ; Liu, P.H. ; Cavus, A. ; Lai, R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
Abstract :
An InGaAs/InAlAs/InP HEMT has been fabricated with 0.15 mum EBL gate, double gate recess and improved Ohmic contact. While maintaining a peak transconductance (Gmp) in excess of 1000 mS/mm, an onstate burnout voltage exceeding 8 V and an operating drain voltage of 5 V have been achieved. A loadpull measurement at 40 GHz was conducted. An output power density of 471 mW/mm, a power-added efficiency of 38% and a power gain of 8 dB were demonstrated, making this technology attractive for power applications at millimeter wave frequencies.
Keywords :
aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; InGaAs-InAlAs-InP; drain voltage; high electron mobility transistors; loadpull measurement; millimeter wave frequencies; ohmic contact; power HEMT; power density; size 0.15 mum; transconductance; voltage 5 V; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Millimeter wave technology; Ohmic contacts; Power generation; Transconductance; Voltage; High electron mobility transisters (HEMT); InGaAs/InAlAs/InP; Ohmic contact; breakdown voltage; double recess; output power (Pout); power amplifier (PA); power-added efficiency (PAE);
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012479
