Title :
An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation characteristics
Author :
Yang, Jung Gil ; Kim, Munho ; Yang, Kyounghoon
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci. (EECS), Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
Abstract :
A high-isolation broadband traveling-wave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 times 0.8 mm2 including pads has been achieved by using the meandered microstrip lines.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; indium compounds; integrated circuit design; microwave switches; p-i-n diodes; transmission lines; InGaAs; MMIC switch; PIN diodes; broadband traveling-wave switch; chip size; circuit design; frequency 15 GHz to 70 GHz; high-isolation characteristics; meandered microstrip lines; transmission line design; Circuit synthesis; Communication switching; Distributed parameter circuits; Frequency; Impedance; Indium gallium arsenide; MMICs; Power transmission lines; Shunt (electrical); Switches; InGaAs; MMIC; PIN diode; artificial transmission line; component; switch;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012480
