Title :
Improvement in electrostatic-discharge tolerance of 1.3µm AlGaInAs/InP buried heterostructure laser diodes
Author :
Ichikawa, H. ; Fukuda, C. ; Matsukawa, S. ; Hamada, K. ; Ikoma, N. ; Nakabayashi, T.
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama
Abstract :
This is the first report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP buried heterostructure laser diodes. We found that the dominant degradation mechanism was melting of the active layer due to light absorption. We successfully improved ESD tolerance by facet passivation. The cumulative degradation ratio at 1.0 kV ESD tests was decreased from 40 to 0%.
Keywords :
III-V semiconductors; aluminium compounds; electrostatic discharge; gallium arsenide; indium compounds; passivation; semiconductor lasers; AlGaInAs-InP; buried heterostructure laser diodes; cumulative degradation ratio; dominant degradation mechanism; electrostatic discharge-induced degradation; facet passivation; light absorption; voltage 1 kV; Circuits; Degradation; Diode lasers; Electrostatic discharge; Indium phosphide; Optical reflection; Passivation; Protection; Testing; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012484
