III–V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI

Author

Nishiyama, Nobuhiko ; Maruyama, Takeo ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Okayama

fYear

2009

Firstpage

210

Lastpage

214

Abstract

InP-based photonic devices on SOI substrate using bonding technologies were demonstrated. Direct bonding and BCB bonding enable us to realize high optical confinement DFB lasers and other devices for intra/inter-chip connection in Si LSI circuit. Low threshold optical pumped membrane lasers and CW-operation of lateral current injection lasers with thin lateral cladding lasers were realized.

Keywords

III-V semiconductors; distributed feedback lasers; elemental semiconductors; indium compounds; integrated circuit interconnections; integrated optics; large scale integration; membranes; silicon; silicon-on-insulator; wafer bonding; CW-operation; InP; LSI; LSI circuit; SOI; Si; cladding; current injection lasers; direct bonding technology; heterogeneous photonic integrated devices; interchip connection; intrachip connection; optical confinement DFB lasers; optical interconnection; optical pumped membrane lasers; photonic devices; wafer bonding process; Biomembranes; Bonding; Integrated circuit technology; Large scale integration; Laser excitation; Optical devices; Optical interconnections; Optical pumping; Photonics; Pump lasers; III–V semiconductor; Silicon On Insulator; Wafer Bonding Photonic Integrated Circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012485

Filename

5012485