DocumentCode :
171706
Title :
High efficiency W-band power amplifiers using ring-shaped sub-quarter-wavelength power combining technique
Author :
Daneshgar, Saeid ; Hyun-Chul Park ; Rode, Johann C. ; Griffith, Zach ; Urteaga, M. ; Byung-Sung Kim ; Rodwell, Mark J. W.
Author_Institution :
ECE Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
fYear :
2014
fDate :
1-6 June 2014
Firstpage :
1
Lastpage :
4
Abstract :
We present W-band power amplifiers which are designed using the sub-quarter-wavelength transmission line balun in a ring-shaped configuration and fabricated in a 0.25 μm InP DHBT technology. Operating at 86GHz, a single-stage PA exhibits 20.86dBm saturated output power with 10.2dB peak power gain, a recored PAE of 35% and a record 3-dB bandwidth of 33GHz. A two-stage PA exhibits 22.75dBm saturated output power with 20.4dB peak power gain, a PAE of 32.8% and a 3-dB bandwidth of 16GHz.
Keywords :
III-V semiconductors; baluns; bipolar MIMIC; indium compounds; millimetre wave power amplifiers; transmission lines; InP; bandwidth 16 GHz; frequency 86 GHz; gain 10.2 dB; gain 20.4 dB; size 0.25 mum; Capacitance; Gain measurement; Impedance matching; Loss measurement; Power transmission lines; RNA; Topology; InP HBT; W-band power amplifier; high efficiency; power combining techniques; sub-quarter-wavelength balun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/MWSYM.2014.6848661
Filename :
6848661
Link To Document :
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