FDTD analysis of wire antenna used for process plasma

There is a strong desire to expand the area of the substrate in the semiconductor process. In order to produce and control the plasma in a large area by using radiofrequency, it is important to clarify how the electromagnetic field distribution depends on the antenna shape or the feeding method. However, the analysis of electromagnetic field in the process plasma has not been reported because the plasma medium is strongly dispersive. Moreover, the real part of the complex permittivity of the plasma could be negative in the cutoff frequency region. The FDTD method has been widely used for many problems including the plasma medium. In this paper, the FDTD analysis of wire antenna used for the plasma process is presented considering the ion sheath effect.