Title :
Uncooled (25–85 °C) 10-Gbps operation of 1.3-µm-range metamorphic InGaAs laser on GaAs substrate
Author :
Arai, Masakazu ; Tadokoro, Takashi ; Kobayashi, Wataru ; Fujisawa, Takeshi ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro
Author_Institution :
Photonics Labs., NTT Corp., Atsugi
Abstract :
We have realized the first 10-Gbps direct modulation of a 1.3-mum-range laser diode with an InGaAs metamorphic buffer on a GaAs substrate. A 200-mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. The maximum operating temperature was 135degC. This excellent performance is attributed to the high quality InGaAs metamorphic buffer.
Keywords :
gallium arsenide; indium compounds; optical modulation; quantum well lasers; GaAs; GaAs substrate; InGaAs; bit rate 10 Gbit/s; direct modulation; metamorphic buffer; metamorphic semiconductor laser; multiple quantum wells; size 200 mum; temperature 25 C to 85 C; threshold currents; wavelength 1.3 mum; Buffer layers; Gallium arsenide; Indium gallium arsenide; Lattices; Quantum dot lasers; Quantum well devices; Substrates; Temperature distribution; Temperature sensors; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012489
