DocumentCode
1717098
Title
Uncooled (25–85 °C) 10-Gbps operation of 1.3-µm-range metamorphic InGaAs laser on GaAs substrate
Author
Arai, Masakazu ; Tadokoro, Takashi ; Kobayashi, Wataru ; Fujisawa, Takeshi ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro
Author_Institution
Photonics Labs., NTT Corp., Atsugi
fYear
2009
Firstpage
226
Lastpage
229
Abstract
We have realized the first 10-Gbps direct modulation of a 1.3-mum-range laser diode with an InGaAs metamorphic buffer on a GaAs substrate. A 200-mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. The maximum operating temperature was 135degC. This excellent performance is attributed to the high quality InGaAs metamorphic buffer.
Keywords
gallium arsenide; indium compounds; optical modulation; quantum well lasers; GaAs; GaAs substrate; InGaAs; bit rate 10 Gbit/s; direct modulation; metamorphic buffer; metamorphic semiconductor laser; multiple quantum wells; size 200 mum; temperature 25 C to 85 C; threshold currents; wavelength 1.3 mum; Buffer layers; Gallium arsenide; Indium gallium arsenide; Lattices; Quantum dot lasers; Quantum well devices; Substrates; Temperature distribution; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012489
Filename
5012489
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