Selective bridging of single-walled carbon nanotubes controlled with electric field applied to silicon structures

We have achieved controlling the number of bridging carbon nanotubes (CNTs) between silicon structures by applying an electric field during catalytic CVD. We fabricated a silicon gap where CNTs would bridge. From the SEM images after the CVD process, we observed that the electric field applied in parallel with the bridging direction was effective in increasing the number of bridging CNTs. On the other hand, the vertical electric field decreased the number of bridging CNTs.