Title :
Semiconductive properties of heterointegration of INP/INGAAS on high doped silicon wire waveguide for silicon hybrid laser
Author :
Li, Ling-Han ; Takigawa, Ryo ; Higo, Akio ; Kubota, Masanori ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo
Abstract :
The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.
Keywords :
III-V semiconductors; annealing; elemental semiconductors; gallium arsenide; indium compounds; optical waveguides; plasma materials processing; semiconductor lasers; silicon; I-V characteristics; InP-InGaAs-Si; annealing; electrical pumping; heterointegration; high doped silicon wire waveguide; plasma assisted direct bonding; semiconductive properties; silicon hybrid laser; Bonding forces; Indium gallium arsenide; Indium phosphide; Plasma measurements; Plasma properties; Semiconductor lasers; Semiconductor waveguides; Silicon; Waveguide lasers; Wire;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012490
