Semiconductive properties of heterointegration of INP/INGAAS on high doped silicon wire waveguide for silicon hybrid laser

Author

Li, Ling-Han ; Takigawa, Ryo ; Higo, Akio ; Kubota, Masanori ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo

fYear

2009

Firstpage

230

Lastpage

233

Abstract

The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

Keywords

III-V semiconductors; annealing; elemental semiconductors; gallium arsenide; indium compounds; optical waveguides; plasma materials processing; semiconductor lasers; silicon; I-V characteristics; InP-InGaAs-Si; annealing; electrical pumping; heterointegration; high doped silicon wire waveguide; plasma assisted direct bonding; semiconductive properties; silicon hybrid laser; Bonding forces; Indium gallium arsenide; Indium phosphide; Plasma measurements; Plasma properties; Semiconductor lasers; Semiconductor waveguides; Silicon; Waveguide lasers; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012490

Filename

5012490