Title :
Spontaneous formation of ultra-short period lateral composition modulation n TIInGaAsN/TIInP structures
Author :
Ishimaru, Michiyo ; Tanaka, Yuichi ; Hasegawa, Shun ; Asahi, H. ; Sato, Kiminori ; Konno, T.J.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki
Abstract :
We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition modulation, are formed in TlInGaAsN layers. Their modulation period was estimated to ~1 nm which is much smaller than that reported previously.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electron diffraction; gallium arsenide; indium compounds; phase separation; scanning electron microscopy; semiconductor heterojunctions; semiconductor quantum wells; semiconductor thin films; thallium compounds; transmission electron microscopy; STEM; TEM; TIInGaAsN-TIInP; electron diffraction; gas source molecular beam epitaxy; scanning transmission electron microscopy; semiconductor layers; spontaneous phase separation; transmission electron microscopy; triple quantum well structures; ultra-short period lateral composition modulation; Diffraction; Electron beams; Lattices; Molecular beam epitaxial growth; Nitrogen; Optical fiber communication; Reflection; Scanning electron microscopy; Substrates; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012493
