Spontaneous formation of ultra-short period lateral composition modulation n TIInGaAsN/TIInP structures

Author

Ishimaru, Michiyo ; Tanaka, Yuichi ; Hasegawa, Shun ; Asahi, H. ; Sato, Kiminori ; Konno, T.J.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki

fYear

2009

Firstpage

253

Lastpage

254

Abstract

We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition modulation, are formed in TlInGaAsN layers. Their modulation period was estimated to ~1 nm which is much smaller than that reported previously.

Keywords

III-V semiconductors; chemical beam epitaxial growth; electron diffraction; gallium arsenide; indium compounds; phase separation; scanning electron microscopy; semiconductor heterojunctions; semiconductor quantum wells; semiconductor thin films; thallium compounds; transmission electron microscopy; STEM; TEM; TIInGaAsN-TIInP; electron diffraction; gas source molecular beam epitaxy; scanning transmission electron microscopy; semiconductor layers; spontaneous phase separation; transmission electron microscopy; triple quantum well structures; ultra-short period lateral composition modulation; Diffraction; Electron beams; Lattices; Molecular beam epitaxial growth; Nitrogen; Optical fiber communication; Reflection; Scanning electron microscopy; Substrates; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012493

Filename

5012493