Fabrication and structural characterization of nearly lattice-matched p-ZnSnAs2/n-InP heterojunctions

Rectifying p-ZnSnAs₂/n-InP heterojunctions have been successfully fabricated by growing p-type ZnSnAs₂ epitaxial layers of different thicknesses on n-type InP(001) substrates using molecular beam epitaxy (MBE). The growths were monitored by in-situ reflection high-energy electron diffraction (RHEED). Electron Probe MicroAnalysis (EPMA) investigations have revealed that all the samples are nominally stoichiometric. Reciprocal space mapping of the ~120-nm-thick sample suggests pseudomorphic growth with respect to the InP substrate. High-resolution x-ray diffraction (HR-XRD), Atomic Force Microscopy (AFM), and Transmission Electron Microscopy (TEM) studies suggest high structural qualities of the epitaxial films.