Title :
Improvement in luminescence properties of TlInGaAsN/TlInP multi-layers grown by gas source molecular beam epitaxy
Author :
Tanaka, Y. ; Hasegawa, S. ; Liu, J.Q. ; Ishimaru, M. ; Asahi, H.
Author_Institution :
ISIR, Osaka Univ., Suita
Abstract :
TlInGaAsN/TlInP/InP hetero-structures were studied for the application to the temperature insensitive wavelength laser diodes. By the introduction of N, the incorporation of Tl was increased, but optical properties were degraded. In order to solve this problem, TlInGaAsN/TlInP multiple layer structures with thin TlInGaAsN layer was proposed and the improvement in optical properties was confirmed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical multilayers; semiconductor lasers; thallium compounds; TlInGaAsN-TlInP-InP; gas source molecular beam epitaxy; heterostructures; luminescence properties; multilayers; optical properties; temperature insensitive wavelength laser diodes; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Diode lasers; Indium phosphide; Luminescence; Molecular beam epitaxial growth; Nitrogen; Plasma measurements; Plasma temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012495
