Title :
GaAsSb-GaAsN -based type-II ‘W’ structures for mid-IR emission
Author :
Rathi, M.K. ; Khandekar, A.A. ; Song, Xueyan ; Babcock, S.E. ; Mawst, L.J. ; Kuech, T.F.
Author_Institution :
Dept. of Chem. & Biol. Eng., Univ. of Wisconsin-Madison, Madison, WI
Abstract :
GaAsSb-GaAsN-based type-II dasiaWpsila structures have been studied for mid-IR (1.3-1.6mum) emission. Post growth annealing increases the photoluminescence (PL) intensity of the structures. Temperature dependent PL show a charge localization effect due to presence of nitrogen.
Keywords :
III-V semiconductors; annealing; gallium arsenide; gallium compounds; photoluminescence; spectral line intensity; GaAsSn-GaAsN; charge localization; mid-infrared emission; post growth annealing; spectral line intensity; temperature dependent photoluminescence; type-II W structures; wavelength 1.3 mum to 1.6 mum; Annealing; Capacitive sensors; Charge carrier processes; Fiber lasers; Laser sintering; Laser transitions; Nitrogen; Photoluminescence; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012496
