Title :
Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)
Author :
Ndip, Ivan ; Zoschke, K. ; Lobbicke, Kai ; Wolf, M.J. ; Guttowski, Stephan ; Reichl, Herbert ; Lang, K.-D. ; Henke, Heino
Author_Institution :
Fraunhofer Inst. for Reliability & Microintegration, Berlin, Germany
Abstract :
In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz. An in-depth analysis of the assumptions behind these methods is made, from which their limits of accuracy/validity are defined. Based on this, the most reliable methods within the studied frequency range are proposed. The TSVs are designed, fabricated, and measured. Very good correlation is obtained between electrical parameters of the TSVs extracted from the measurements and electromagnetic field simulations.
Keywords :
capacitance measurement; electric admittance measurement; electric resistance measurement; integrated circuit measurement; integrated circuit modelling; numerical analysis; three-dimensional integrated circuits; TSVs; analytical-based methods; capacitance extraction; conductance extraction; electrical parameter extraction; electromagnetic field simulations; frequency 100 MHz to 100 GHz; inductance extraction; measurement-based methods; numerical-based methods; resistance extraction; through silicon vias; Accuracy; Inductance; Proximity effects; Reliability; Resistance; Silicon; Through-silicon vias; Analytical; RLCG parameters; measurement-based methods; numerical-; through-silicon via (TSV);
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2013.2279688
