Title :
A high temperature RF wireless pressure sensing system
Author_Institution :
Coll. of Inf. Sci. & Eng., Northeastern Univ. Shenyang, Shenyang, China
Abstract :
In this paper, an active high temperature RF wireless pressure sensing system is proposed by combining a novel Silicon Carbide (SiC) wireless transmitter and a commercial piezoresistive pressure sensor head. The entire sensing system is capable of high temperature operation up to 450 °C. A prototype system, fabricated by using low temperature co-fire (LTCC) process, was tested from room temperature to 450 °C and the pressure signal was successfully recovered at the receiver throughout the entire temperature range.
Keywords :
piezoresistive devices; pressure sensors; silicon compounds; temperature sensors; transmitters; wide band gap semiconductors; wireless sensor networks; LTCC process; SiC; high temperature RF wireless pressure sensing system; low temperature cofire process; piezoresistive pressure sensor head; silicon carbide wireless transmitter; temperature 20 degC to 450 degC; temperature 293 K to 298 K; JFETs; Radio frequency; Silicon carbide; Temperature measurement; Temperature sensors; Wireless communication; Wireless sensor networks; High Temperature; LTCC; Pressure Sensing; Silicon Carbide;de; Wireless;
Conference_Titel :
Wireless for Space and Extreme Environments (WiSEE), 2014 IEEE International Conference on
Conference_Location :
Noordwijk
DOI :
10.1109/WiSEE.2014.6973063
