DocumentCode
1717787
Title
X-ray diffraction analysis of quantum cascdse lasers
Author
Cheng, Liwei ; Choa, Ruth ; Khurgin, Jacob ; Choa, Fow-Sen ; Chen, Xing ; Wang, Xiaojun ; Fan, Jenyu ; Chen, Jianxin ; Gmachl, Claire
Author_Institution
Dept. of CSEE, Univ. of Maryland, Baltimore, MD
fYear
2009
Firstpage
267
Lastpage
269
Abstract
Growth quality of quantum-cascade-lasers (QCLs) is difficult to be characterized due to the demanding requirements on hetero-interface quality and thickness control for all >1000 nano-scale superlattice structure. In this work we employ X-ray diffractometry (XRD) to effectively evaluate QCL-wafer growths.
Keywords
X-ray diffraction; nanostructured materials; quantum cascade lasers; semiconductor growth; superlattices; X-ray diffraction analysis; X-ray diffractometry; XRD; heterointerface quality; nanoscale superlattice stucture; quantum cascdse lasers-wafer growth; Cities and towns; Lattices; Nanoscale devices; Optical materials; Quantum cascade lasers; Satellites; Superlattices; X-ray diffraction; X-ray lasers; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012507
Filename
5012507
Link To Document