Title :
Effect of sulfur passivation and dielectric capping on the dark current of InGaAs/InP PIN photodetectors
Author :
Sheela, D. ; DasGupta, Nandita
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai
Abstract :
This work is aimed at optimizing the surface passivation scheme for InGaAs/InP PIN photodetector using [(NH4)2Sx, x>1] solution and comparing the effect of two different dielectric capping layers on the long term stability of the detector.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; passivation; photodetectors; PIN photodetectors; dark current; dielectric capping; long term stability; sulfur passivation effect; Chemicals; Dark current; Detectors; Dielectrics; Indium gallium arsenide; Indium phosphide; Passivation; Photodetectors; Surface treatment; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012511
