Title :
Enhancing oscillator strength for second harmonic generation in AlGaAs/InGaAs quantum cascade lasers
Author :
Triplett, Gregory ; Roberts, Denzil ; Ikpe, Stanley
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Missouri, Columbia, MO
Abstract :
This paper explores tunable oscillator strength and nonlinear susceptibility in strained quantum cascade lasers (QCLs) that lead to frequency mixing within a GaAs matrix. The study involves a QCL cavity design with emission near the 3.8 mum range, a region within the atmospheric water transparency window that is useful for various sensing applications. A self-consistent Schrodinger-Poisson solver was employed to analyze the effects of strain within an AlGaAs/InGaAs active region between AlGaAs/GaAs injectors on a [111] GaAs matrix for the purpose of enhancing nonlinear susceptibility. A neural network simulator was employed to model the influence of indium composition in the active region based on oscillator strength. Results from neural network modeling highlight critical regions within the design space where the oscillator strength is maximized. Results demonstrate the feasibility of strained AlGaAs/InGaAs devices on GaAs for producing higher order harmonics that lay below the 4-mum spectral limit.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; neural nets; nonlinear optical susceptibility; optical harmonic generation; optical windows; oscillator strengths; quantum cascade lasers; semiconductor device models; AlGaAs-InGaAs; GaAs; atmospheric water transparency window; frequency mixing; neural network simulator; nonlinear susceptibility; oscillator strength; quantum cascade laser cavity design; second harmonic generation; self-consistent Schrodinger-Poisson solver; Frequency conversion; Gallium arsenide; Indium gallium arsenide; Laser transitions; Nonlinear optics; Optical harmonic generation; Optical materials; Optical mixing; Oscillators; Quantum cascade lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012513