Title :
Realization of a tunable near infra red InP / InGaAs QWs based photodetector integrated in a MOEMS structure for micro-spectrometer applications
Author :
Parillaud, O. ; Huet, O. ; Décobert, J. ; Garrigues, M. ; Gil-Sobraquès, R. ; Leclercq, J.-L.
Author_Institution :
III-V Lab., Alcatel-Thales, Palaiseau
Abstract :
The aim of this paper is to report on the realization of a tunable near infrared InP/GaInAs QWs based photodetector. The device is based on an InGaAs strained QWs photodiode integrated with a MOEMS structure for wavelength tunability. We present here the various steps of the realization of the micro-machined tunable air-gap Fabry-Perot resonator coupled with the long wavelength InGaAs QWs based photodetector. Different structure shapes have been designed and processed for the realization of unique devices and linear or 2 dimensional arrays. Results obtained on the devices, as tunability up to 60 nm are presented.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; micro-optomechanical devices; photodetectors; semiconductor quantum wells; InP-GaInAs; MOEMS structure; infrared InP-InGaAs quantum wires; micro-machined tunable air-gap Fabry-Perot resonator; micro-spectrometer; photodetector; wavelength tunability; Air gaps; Dielectrics; Etching; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Photodetectors; Photodiodes; Resonance; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012515
