Realization of a tunable near infra red InP / InGaAs QWs based photodetector integrated in a MOEMS structure for micro-spectrometer applications

The aim of this paper is to report on the realization of a tunable near infrared InP/GaInAs QWs based photodetector. The device is based on an InGaAs strained QWs photodiode integrated with a MOEMS structure for wavelength tunability. We present here the various steps of the realization of the micro-machined tunable air-gap Fabry-Perot resonator coupled with the long wavelength InGaAs QWs based photodetector. Different structure shapes have been designed and processed for the realization of unique devices and linear or 2 dimensional arrays. Results obtained on the devices, as tunability up to 60 nm are presented.