Title :
Semiconductor optical amplifier designs for passive optical network extensions
Author :
Assadihaghi, A. ; Teimoori, H. ; Benhsaien, A. ; Tolstikhin, V. ; Hall, T.J. ; Hinzer, K.
Author_Institution :
Univ. of Ottawa, Ottawa, ON
Abstract :
We report a polarization insensitive broadband semiconductor optical amplifier design based on an asymmetric multi-quantum well structure. The device operates with 9 dBm saturation output power, 23 dB gain, and <0.8 dB polarization dependency.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light polarisation; semiconductor optical amplifiers; semiconductor quantum wells; In1-xGaxAsyP1-y-InP; asymmetric multiquantum well structure; passive optical network extensions; polarization dependency; polarization insensitive broadband semiconductor; saturation output power; semiconductor optical amplifier; Bandwidth; Optical design; Optical fiber networks; Optical materials; Optical polarization; Optical pumping; Optical saturation; Passive optical networks; Semiconductor optical amplifiers; Stimulated emission; Asymmetrical multi-quantum well; semiconductor optical amplifier;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012516
