Quantum dots in a vertical cavity for all-optical switching devices

Author

Jin, C.Y. ; Kojima, O. ; Kita, T. ; Wada, O. ; Hopkinson, M. ; Akahane, K.

Author_Institution

Div. of Frontier Res. & Technol., Kobe Univ., Kobe

fYear

2009

Firstpage

406

Lastpage

407

Abstract

Self-assembled InAs/GaAs quantum dots (QD) incorporated in a GaAs/AlAs Fabry-Perot cavity have been employed as an optical nonlinear source for vertical-reflection type switches. Switching times of 32~80 ps have been achieved in this novel structure. All-optical switching using excited QD states shows better performance due to fast carrier relaxation between QD energy states. These results demonstrate potential application of QD materials in ultra-fast all-optical switching devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical switches; quantum dot lasers; semiconductor quantum dots; semiconductor switches; GaAs-AlAs; GaAs/AlAs Fabry-Perot cavity; InAs-GaAs; all-optical switching devices; carrier relaxation; energy states; optical nonlinear source; self-assembled InAs/GaAs quantum dots; switching times; vertical-reflection type switches; Communication switching; Gallium arsenide; Mirrors; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical interferometry; Optical saturation; Optical switches; Quantum dots; Quantum dots; optical switch; vertical cavity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012517

Filename

5012517