A Novel Method to Estimate Current Leakage of Laser Diodes

Author

Shuang, Zhang ; Shuxu, Guo ; Fengli, Gao

Author_Institution

Jilin Univ., Changchun

fYear

2007

Abstract

The low frequency noise (LFN) properties are investigated on the high power 808 nm InGaAsP/GaAs quantum well (QW) laser diodes under low bias current (10^-6~10^-3 A) in order to estimate the current leakage of semiconductor lasers. For the first time, we investigate the LFN peak under very low bias current. After a short time electrical aging (50 or 150 hours), the right-shifted position of the LFN peak and annealing effect are observed. An equivalent circuit model considering of parallel shunt path is employed to interpret these experimental results. It is concluded that LFN peak under low injected current is sensitive to the mechanisms of microscopic current leakage, and can be used as an indicator of reliability of laser diodes.

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; indium compounds; quantum well lasers; semiconductor device reliability; semiconductor lasers; InGaAsP-GaAs; current leakage estimation; equivalent circuit; injected current; low frequency noise property; quantum well laser diodes; right-shifted position; semiconductor device reliability; semiconductor lasers; wavelength 808 nm; Aging; Diode lasers; Frequency estimation; Gallium arsenide; Laser modes; Laser noise; Low-frequency noise; Power lasers; Quantum well lasers; Semiconductor lasers; current leakage; laser diode; low frequency noise; noise peak; nondestructive test; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Measurement and Instruments, 2007. ICEMI '07. 8th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4244-1136-8

Electronic_ISBN

978-1-4244-1136-8

Type

conf

DOI

10.1109/ICEMI.2007.4350480

Filename

4350480