DocumentCode
1718474
Title
Pyroelectric infrared sensors with fast response time and high sensitivity using epitaxial Pb(ZrTi)O3 films on epitaxial γ-Al2O3/Si substrates
Author
Akai, Daisuke ; Hirabayashi, Keisuke ; Yokawa, Mikako ; Sawada, Kazuaki ; Taniguchi, Yoshiharu ; Murashige, Shinnichi ; Nakayama, Naoto ; Yamada, Tetsuya ; Murakami, Kensukc ; Ishida, Makoto
Author_Institution
Venture Bus. Lab., Toyohashi Univ. of Technol., Japan
Volume
1
fYear
2005
Firstpage
307
Abstract
In this paper, we report that a pyroelectric infrared (IR) sensor with fast response time and high sensitivity using epitaxial Pb(Zr,Ti)O3 (PZT) thin films on epitaxial γ-Al2O3/Si substrates has successfully fabricated for the first time. The fabricated sensor operated under chopping frequency of 100 Hz. The values of output signals were 1.6 mVp-p, 0.8 mVp-p and 0.5 mVp-p with the chopping frequencies of 20 Hz, 50 Hz and 100 Hz, respectively. This sensor has potential for Si integrated sensing systems and is compared with pyroelectric IR sensors using MgO substrates.
Keywords
epitaxial layers; infrared detectors; pyroelectric detectors; substrates; thin films; 100 Hz; 20 Hz; 50 Hz; Al2O3-Si; IR sensor; PZT thin films; Pb(ZrTi)O3; epitaxial films; epitaxial substrates; pyroelectric infrared sensors; response time; sensitivity; Biosensors; Delay; Infrared image sensors; Infrared sensors; Pyroelectricity; Semiconductor films; Substrates; Temperature sensors; Thermal sensors; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN
0-7803-8994-8
Type
conf
DOI
10.1109/SENSOR.2005.1496418
Filename
1496418
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