A monolithic 2.4 GHz CMOS active balanced circuit

Author

Su, C.C. ; Hsiao, C.C. ; Chan, Y.-J.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

2

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

214

Abstract

A modified RF nMOS model is presented for high-frequency circuit design. The high-frequency nMOS model is based on a SPICE level 3 model, by adding parasitic passive components to describe the microwave behavior. This hybrid RF model can well predict the MOSFET behavior up to 10 GHz under various biasing conditions. A spiral inductor model is also presented. The inductance at 2.4 GHz is 2.4 nH, with a quality factor of 4. Based on these models, we designed a 180° active-balanced circuit. The 180° balanced circuits consist of a MOSFET (0.6 μm gate length and 200 μm gate width), and input/output matching networks. The unbalanced phase was about 180° in the 1-2.5 GHz frequency band, and the insertion loss was about 6 dB. The magnitude difference between two output ports is less than 0.7 dB

Keywords

CMOS analogue integrated circuits; MOSFET; Q-factor; S-parameters; SPICE; active networks; field effect MMIC; impedance matching; inductance; integrated circuit design; semiconductor device models; 0.6 mum; 1 to 2.5 GHz; 180° active-balanced circuit; 2.4 GHz; 200 mum; 6 dB; S-parameters; SPICE level 3 model; biasing conditions; high-frequency circuit design; hybrid RF model; inductance; input/output matching networks; insertion loss; modified RF nMOS model; monolithic 2.4 GHz CMOS active balanced circuit; output port magnitude difference; parasitic passive components; quality factor; spiral inductor model; unbalanced phase; Circuit synthesis; Inductance; Inductors; MOS devices; MOSFET circuits; Predictive models; Radio frequency; SPICE; Semiconductor device modeling; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.829778

Filename

829778