Title :
Novel structure to measure emitter-base misalignment
Author :
Fallon, M. ; Redford, M. ; Findlater, K. ; Newsam, M.
Author_Institution :
Nat. Semicond., Greenock, UK
Abstract :
This paper addresses the issue of the alignment between emitter and base of a bipolar process. Current electrical alignment structures usually rely an electrical contact between the layers or a division of one layer by the other. In the case of a bipolar emitter-base structure, neither approach is directly applicable. Here we present an alternative to solve this problem
Keywords :
bipolar transistors; semiconductor device testing; bipolar process; electrical alignment; emitter-base misalignment measurement; test structure; Bipolar transistors; Contacts; Current density; Electric resistance; Electric variables measurement; Electrical resistance measurement; Semiconductor diodes; Testing; Virtual colonoscopy; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589374
