Recent development in optically generated slow wave phenomena

Author

Itoh, Tatsuo

Author_Institution

Electr. Eng. Res. Lab., Texas Univ., Austin, TX, USA

fYear

1989

Firstpage

708

Lastpage

709

Abstract

The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm², 32.0 mW/cm ², and 63.7 mW/cm². A maximum relative phase shift of 60° at 9.5 GHz was observed for an illumination of 3.2 mW/cm². The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques

Keywords

guided electromagnetic wave propagation; photoconductivity; GaAlAs layers; GaAs layer; coplanar waveguide; guided wave; heterostructure semiconductor; monolithic microwave integrated circuit; optical illumination; optically controlled phase shifter; optically generated slow wave phenomena; transmission line; Coplanar transmission lines; Coplanar waveguides; Gallium arsenide; Lighting; Optical control; Optical planar waveguides; Optical propagation; Optical waveguides; Planar transmission lines; Planar waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean

Conference_Location

Lisbon

Type

conf

DOI

10.1109/MELCON.1989.50140

Filename

50140