Title :
Recent development in optically generated slow wave phenomena
Author_Institution :
Electr. Eng. Res. Lab., Texas Univ., Austin, TX, USA
Abstract :
The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm2, 32.0 mW/cm 2, and 63.7 mW/cm2. A maximum relative phase shift of 60° at 9.5 GHz was observed for an illumination of 3.2 mW/cm2. The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques
Keywords :
guided electromagnetic wave propagation; photoconductivity; GaAlAs layers; GaAs layer; coplanar waveguide; guided wave; heterostructure semiconductor; monolithic microwave integrated circuit; optical illumination; optically controlled phase shifter; optically generated slow wave phenomena; transmission line; Coplanar transmission lines; Coplanar waveguides; Gallium arsenide; Lighting; Optical control; Optical planar waveguides; Optical propagation; Optical waveguides; Planar transmission lines; Planar waveguides;
Conference_Titel :
Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean
Conference_Location :
Lisbon
DOI :
10.1109/MELCON.1989.50140
