Determining the switching properties of the minimum function from a single VI characteristic

The need of high capacity, high density and fast memories yields to new memories types. One of the most discussed successors of Flash memories are the resistive switches. Using memristors it is possible not only to store information or perform logic operations but also multiple unconventional computing applications were proposed. Therefore is the need to simulate such kinds of devices. In this paper we present a new strategy to determine the characteristics of switching on a complementary resistive switch. This minimum volt-ampere characteristic is obtained from a single structure characteristic using method described in this paper.