Title :
Characterization of CdTe crystals grown by the Vertical Bridgman method
Author :
Fiederle, M. ; Fauler, A. ; Babentsov, V. ; Franc, J. ; Ludwig, J. ; Benz, K.W.
Author_Institution :
Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ., Freiburg, Germany
fDate :
6/23/1905 12:00:00 AM
Abstract :
CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity. The effort of the improvements could be demonstrated by reduction of twins and the growth of large single crystalline grains up to 40×40 mm2. Different dopants had been applied to obtain resistivities of 5×108 Ohmcm up to 2×1010 Ohmcm
Keywords :
II-VI semiconductors; cadmium compounds; crystal growth from melt; electrical resistivity; semiconductor counters; twinning; 25 to 75 mm; 40 mm; CdTe; Vertical Bridgman method; crystal growth; crystalline grains; crystallinity; dopants; growth rate; in-situ temperature monitoring; resistivities; stable growth conditions; temperature gradient; twin reduction; Cadmium; Condition monitoring; Conductivity; Crystalline materials; Crystallization; Crystals; Detectors; Tellurium; Temperature measurement; Temperature sensors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1009281
