Characterization of CdTe crystals grown by the Vertical Bridgman method

Author

Fiederle, M. ; Fauler, A. ; Babentsov, V. ; Franc, J. ; Ludwig, J. ; Benz, K.W.

Author_Institution

Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ., Freiburg, Germany

Volume

4

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

2295

Lastpage

2298

Abstract

CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity. The effort of the improvements could be demonstrated by reduction of twins and the growth of large single crystalline grains up to 40×40 mm². Different dopants had been applied to obtain resistivities of 5×10⁸ Ohmcm up to 2×10¹⁰ Ohmcm

Keywords

II-VI semiconductors; cadmium compounds; crystal growth from melt; electrical resistivity; semiconductor counters; twinning; 25 to 75 mm; 40 mm; CdTe; Vertical Bridgman method; crystal growth; crystalline grains; crystallinity; dopants; growth rate; in-situ temperature monitoring; resistivities; stable growth conditions; temperature gradient; twin reduction; Cadmium; Condition monitoring; Conductivity; Crystalline materials; Crystallization; Crystals; Detectors; Tellurium; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2001 IEEE

Conference_Location

San Diego, CA

ISSN

1082-3654

Print_ISBN

0-7803-7324-3

Type

conf

DOI

10.1109/NSSMIC.2001.1009281

Filename

1009281