Title :
Characterisation of the threshold voltage variation: a test chip and the results
Author :
Niewczas, Mariusz
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
This paper presents an inexpensive test structure for characterisation within wafer variability of the threshold voltage. The expense of measuring many transistors is reduced by analog multiplexing which allows one to perform the measurements with only one analog pin. Results of measurements in digital CMOS technology are presented. The importance of proper identification of spatial component of the threshold voltage variations is pointed out. Without this the characterisation of local fluctuations is usually inaccurate
Keywords :
CMOS digital integrated circuits; integrated circuit measurement; integrated circuit testing; multiplexing; statistical analysis; analog multiplexing; digital CMOS technology; local fluctuations; spatial component; test chip; threshold voltage variation; wafer variability; CMOS technology; Circuit simulation; Electrical resistance measurement; Fluctuations; Microelectronics; Performance evaluation; Semiconductor device measurement; Shift registers; Testing; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589378
