Title :
Electron trapping variations in single-crystal pixelated HgI2 gamma-ray spectrometers
Author :
Baciak, J.E. ; He, Z. ; DeVito, R.P.
Author_Institution :
Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
The characteristics of thick (>5 mm) HgI2 room temperature gamma-ray detectors having 4 small pixel anodes are investigated. Spectra for the different anodes (overall and for individual interaction depths) are presented. The mu-tau product for electrons was measured to study the variations of electron transport within a single HgI2 crystal. By using single polarity charge sensing with depth sensing, the μeτe was estimated to vary from ~9×10-4 cm2/V to 7×10-3 cm2/V. Individual pixels have the ability to produce spectra with resolutions less than 3% at 662 keV. Some effects of electron detrapping and hole transport are also discussed
Keywords :
electron traps; gamma-ray spectrometers; hole mobility; semiconductor counters; 662 keV; HgI2; HgI2 gamma-ray spectrometers; electron transport; electron trapping; hole transport; mu-tau product; pixels; room temperature gamma-ray detectors; Anodes; Cathodes; Charge carrier processes; Crystalline materials; Detectors; Electron traps; Pulse amplifiers; Pulse shaping methods; Spectroscopy; Temperature;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1009290
