DocumentCode :
1719791
Title :
Test structure for mismatch characterization of MOS transistors in subthreshold regime
Author :
Conti, Massimo ; Betta, Gianfranco Dalla ; Orcioni, Simone ; Soncini, Giovanni ; Turchetti, Claudio ; Zorzi, Nicola
Author_Institution :
Dept. of Electron., Ancona Univ., Italy
fYear :
1997
Firstpage :
173
Lastpage :
178
Abstract :
This paper proposes a simple test circuit for characterization of MOS transistor mismatch in a standard 2 μm CMOS technology. Measurements have been performed both in the saturation and subthreshold regimes in order to obtain an accurate characterization in a wide range of operations. The parameter mismatch estimation algorithm is based on Multiple Linear Regression and is able to furnish information on the estimation accuracy
Keywords :
CMOS analogue integrated circuits; characteristics measurement; integrated circuit measurement; integrated circuit testing; statistical analysis; 2 micron; CMOS technology; MOS transistors; estimation accuracy; mismatch characterization; multiple linear regression; parameter mismatch estimation algorithm; saturation regime; subthreshold regime; test circuit; CMOS technology; Circuit testing; Current measurement; Electronic equipment testing; MOSFETs; Mirrors; Neural networks; Parameter estimation; Performance evaluation; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
Type :
conf
DOI :
10.1109/ICMTS.1997.589380
Filename :
589380
Link To Document :
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