Test structure for mismatch characterization of MOS transistors in subthreshold regime

Author

Conti, Massimo ; Betta, Gianfranco Dalla ; Orcioni, Simone ; Soncini, Giovanni ; Turchetti, Claudio ; Zorzi, Nicola

Author_Institution

Dept. of Electron., Ancona Univ., Italy

fYear

1997

Firstpage

173

Lastpage

178

Abstract

This paper proposes a simple test circuit for characterization of MOS transistor mismatch in a standard 2 μm CMOS technology. Measurements have been performed both in the saturation and subthreshold regimes in order to obtain an accurate characterization in a wide range of operations. The parameter mismatch estimation algorithm is based on Multiple Linear Regression and is able to furnish information on the estimation accuracy

Keywords

CMOS analogue integrated circuits; characteristics measurement; integrated circuit measurement; integrated circuit testing; statistical analysis; 2 micron; CMOS technology; MOS transistors; estimation accuracy; mismatch characterization; multiple linear regression; parameter mismatch estimation algorithm; saturation regime; subthreshold regime; test circuit; CMOS technology; Circuit testing; Current measurement; Electronic equipment testing; MOSFETs; Mirrors; Neural networks; Parameter estimation; Performance evaluation; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-3243-1

Type

conf

DOI

10.1109/ICMTS.1997.589380

Filename

589380