DocumentCode :
1719796
Title :
Switching parameter maps-a new approach to the validity domain of power device models
Author :
Allard, B. ; Garrab, H. ; Mi, W. ; Ammous, K. ; Morel, H.
Author_Institution :
INSA Lyon, CNRS UMR, Villeurbanne, France
Volume :
3
fYear :
2003
Firstpage :
1220
Abstract :
Economical constraints render less and less efficient the design of a power converter through loops of trials and corrections on prototypes. Several compact technologies as hybridization on a common substrate render the prototyping expensive and laborious. Prototype-less design methodologies have to be considered. As the simulation becomes a central tool, procedures must be developed correlatively to evaluate the accuracy of the simulation results. The authors propose switching parameter maps as comprehensive data about switching parameters attached to the current and voltage waveforms of power devices during transients.
Keywords :
power convertors; power semiconductor devices; prototypes; semiconductor device models; semiconductor process modelling; simulation; substrates; switching transients; transient analysis; compact technology; current transient waveform; economical constraints; hybridization; less efficient design; loops of trials; power converter; power device models; prototype-less design methodology; simulation; substrate; switching parameter maps; validity domain; voltage transient waveform; Circuits; DC-DC power converters; Design methodology; Power engineering and energy; Power generation economics; Power system modeling; Prototypes; Space technology; Substrates; Switching converters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
ISSN :
0275-9306
Print_ISBN :
0-7803-7754-0
Type :
conf
DOI :
10.1109/PESC.2003.1216622
Filename :
1216622
Link To Document :
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