• DocumentCode
    1720026
  • Title

    MOS only simulated grounded negative resistors

  • Author

    Sunca, Abdullah ; Cicekoglu, Oguzhan ; Dundar, Gunhan

  • Author_Institution
    Dept. of Electr. & Electron. Eng´´g., Bogazici Univ., Istanbul, Turkey
  • fYear
    2011
  • Firstpage
    328
  • Lastpage
    331
  • Abstract
    In this paper, a number of tunable grounded negative resistor circuits are presented. These new negative resistors exhibit important features such as simplicity, independent tunability and wide frequency range. One of the introduced negative resistor circuits is simulated using TSMC 0.18 μm process parameters and compared to a couple of other negative resistors in the literature.
  • Keywords
    MIS devices; resistors; MOS; TSMC 0.18 μm process; simulated grounded negative resistors; size 0.18 mum; tunability; tunable grounded negative resistor circuits; Band pass filters; CMOS integrated circuits; Impedance; Resistance; Resistors; Tunneling; MOS; active resistor; negative resistor; resistance simulation; tunable resistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications and Signal Processing (TSP), 2011 34th International Conference on
  • Conference_Location
    Budapest
  • Print_ISBN
    978-1-4577-1410-8
  • Type

    conf

  • DOI
    10.1109/TSP.2011.6043715
  • Filename
    6043715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1720026