Title :
Carrier transport properties of HPB CdZnTe and THM CdTe:Cl
Author :
Suzuki, Kazuhiko ; Seto, Satoru ; Sawada, Takayuki ; Imai, Kazuaki
Author_Institution :
Dept. of Electr. & Electron. Eng., Hokkaido Inst. of Technol., Sapporo, Japan
fDate :
6/23/1905 12:00:00 AM
Abstract :
Carrier drift mobilities of CdZnTe (CZT) grown by high-pressure Bridgman (HPB) method and chlorine doped CdTe grown by traveling heater method (THM) were measured by a time-of-flight (TOF) technique. A spectrometer grade crystal of HPB CZT shows room temperature electron mobility of 960 cm2/Vs and hole mobility of 56 cm2/Vs. Both electron and hole mobility of THM CdTe:Cl crystals are higher (1100 cm2/Vs for electrons and 88 cm2/Vs for holes) than that of the HPB CZT crystal. Both materials show a saturation of the electron mobility at low temperature around 100 K and a strong decrease of the hole mobility with lowering the temperature. A theoretical mobility calculation has been done by solving Boltzmann transport equation assuming several scattering mechanisms such as polar optical phonon, ionized impurity and alloy scattering. It is concluded from the comparison of the experimental and theoretical temperature dependence that shallow trap controlled mobilities are observed in both spectrometer grade CdZnTe and CdTe crystals
Keywords :
II-VI semiconductors; cadmium compounds; chlorine; crystal growth from melt; electron mobility; hole mobility; semiconductor counters; wide band gap semiconductors; Boltzmann transport equation; CZT; CdTe:Cl; CdZnTe; alloy scattering; carrier drift mobilities; carrier transport properties; chlorine doped CdTe; high-pressure Bridgman method; ionized impurity; polar optical phonon; room temperature electron mobility; room temperature hole mobility; scattering mechanisms; spectrometer grade crystal; time-of-flight technique; traveling heater method; Boltzmann equation; Charge carrier processes; Crystalline materials; Crystals; Electron mobility; Electron optics; Optical materials; Optical scattering; Spectroscopy; Temperature;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1009302
