Carrier transport properties of HPB CdZnTe and THM CdTe:Cl

Author

Suzuki, Kazuhiko ; Seto, Satoru ; Sawada, Takayuki ; Imai, Kazuaki

Author_Institution

Dept. of Electr. & Electron. Eng., Hokkaido Inst. of Technol., Sapporo, Japan

Volume

4

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

2391

Lastpage

2395

Abstract

Carrier drift mobilities of CdZnTe (CZT) grown by high-pressure Bridgman (HPB) method and chlorine doped CdTe grown by traveling heater method (THM) were measured by a time-of-flight (TOF) technique. A spectrometer grade crystal of HPB CZT shows room temperature electron mobility of 960 cm²/Vs and hole mobility of 56 cm²/Vs. Both electron and hole mobility of THM CdTe:Cl crystals are higher (1100 cm²/Vs for electrons and 88 cm²/Vs for holes) than that of the HPB CZT crystal. Both materials show a saturation of the electron mobility at low temperature around 100 K and a strong decrease of the hole mobility with lowering the temperature. A theoretical mobility calculation has been done by solving Boltzmann transport equation assuming several scattering mechanisms such as polar optical phonon, ionized impurity and alloy scattering. It is concluded from the comparison of the experimental and theoretical temperature dependence that shallow trap controlled mobilities are observed in both spectrometer grade CdZnTe and CdTe crystals

Keywords

II-VI semiconductors; cadmium compounds; chlorine; crystal growth from melt; electron mobility; hole mobility; semiconductor counters; wide band gap semiconductors; Boltzmann transport equation; CZT; CdTe:Cl; CdZnTe; alloy scattering; carrier drift mobilities; carrier transport properties; chlorine doped CdTe; high-pressure Bridgman method; ionized impurity; polar optical phonon; room temperature electron mobility; room temperature hole mobility; scattering mechanisms; spectrometer grade crystal; time-of-flight technique; traveling heater method; Boltzmann equation; Charge carrier processes; Crystalline materials; Crystals; Electron mobility; Electron optics; Optical materials; Optical scattering; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2001 IEEE

Conference_Location

San Diego, CA

ISSN

1082-3654

Print_ISBN

0-7803-7324-3

Type

conf

DOI

10.1109/NSSMIC.2001.1009302

Filename

1009302