Photoresponse Modeling and Analysis of InGaP/GaAs Double-HPTs

Author

Khan, Hassan A. ; Rezazadeh, Ali A. ; Yongjian Zhang

Author_Institution

Dept. of Electr. Eng., Lahore Univ. of Manage. Sci., Lahore, Pakistan

Volume

50

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1044

Lastpage

1051

Abstract

Photoresponse of GaAs-based double-heterojunction phototransistors (DHPTs), in surface-illuminated orientation, has been analyzed with a modified small-signal model. The effect of incident optical illumination on various intrinsic parameters has been discussed for In_0.49Ga_0.51P/GaAs N⁺p⁺N^- DHPT. Since the primary detecting material is GaAs, the device is optimized to detect short wavelength at 850 nm. A novel formulation for optical flux absorption in DHPTs is also provided along with its comparison with single-heterojunction phototransistors. The analysis of DHPTs presented in this paper can be utilized for performance enhancement through device optimization in sensors, photoreceivers in optical networks, and remote sensing applications employing integrated circuits.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light absorption; phototransistors; In_0.49Ga_0.51P-GaAs; device optimization; double-HPT; double-heterojunction phototransistors; incident optical illumination; integrated circuits; modified small-signal model; optical flux absorption; optical networks; performance enhancement; photoreceivers; photoresponse modeling; remote sensing applications; sensors; surface-illuminated orientation; Capacitance; Frequency response; Gallium arsenide; Integrated circuit modeling; Integrated optics; Phototransistors; Resistance; Double-heterojunction; Modeling; Phototransistors; double-heterojunction; frequency response; modeling; small signal model;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2365672

Filename

6939662