Title :
Microplasma and uniform MESFET gate breakdown
Author :
Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.
Abstract :
On the basis of 2-D numerical simulation the mechanism of “microplasma” and “uniform” gate-drain breakdown in the GaAs MESFET´s is studied. It is stated that when the MESFET design provides the negative differential conductivity of the part of channel between the gate and the drain recess edge the avalanche current distribution is unstable and microplasma, as a solitary avalanche current filament, is exited at some critical avalanche current. The universal mechanism of microplasma breakdown in semiconductor structures is suggested
Keywords :
III-V semiconductors; Schottky gate field effect transistors; avalanche breakdown; current distribution; gallium arsenide; negative resistance; semiconductor device models; semiconductor plasma; 2D numerical simulation; GaAs; GaAs MESFET; avalanche current distribution instability; avalanche current filament; critical avalanche current; microplasma breakdown; microplasma mechanism; negative differential conductivity; semiconductor structures; uniform gate-drain breakdown; Avalanche breakdown; Breakdown voltage; Conductivity; Current distribution; Electric breakdown; Gallium arsenide; Hysteresis; MESFETs; P-n junctions; Power generation;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632887
