DocumentCode
1720598
Title
Modeling optical response of the GaAs MESFET using PSpice circuit simulator
Author
Ivanovic, Vladimir
Volume
2
fYear
1997
Firstpage
501
Abstract
In this paper a PSpice model for an illuminated GaAs MESFET is derived. A typical device structure is described and the mechanisms of photoresponse are explained. Photocurrent equations are formulated and implemented in a four-port (one port is “optical”) PSpice subcircuit-illuminated MESFET model. The heart of the subcircuit is a PSpice element GaAs FET. The bias dependence of the photoresponse is carefully considered, so that this subcircuit is suitable for both DC, AC and transient (TRAN) analysis. We give also an application example and a complete subcircuit description in PSpice notation (“.cir” file)
Keywords
III-V semiconductors; SPICE; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; photodetectors; phototransistors; photovoltaic effects; semiconductor device models; GaAs; GaAs MESFET; PSpice circuit simulator; PSpice model; bias dependence; external photovoltaic effect; four-port PSpice subcircuit; illuminated GaAs MESFET; optical response modelling; photocurrent equations; photoresponse mechanisms; subcircuit description; Circuit simulation; Gallium arsenide; MESFET circuits; Optical polarization; Optical pumping; Photoconductivity; Photovoltaic effects; Regions; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632888
Filename
632888
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