Title :
Modeling optical response of the GaAs MESFET using PSpice circuit simulator
Author :
Ivanovic, Vladimir
Abstract :
In this paper a PSpice model for an illuminated GaAs MESFET is derived. A typical device structure is described and the mechanisms of photoresponse are explained. Photocurrent equations are formulated and implemented in a four-port (one port is “optical”) PSpice subcircuit-illuminated MESFET model. The heart of the subcircuit is a PSpice element GaAs FET. The bias dependence of the photoresponse is carefully considered, so that this subcircuit is suitable for both DC, AC and transient (TRAN) analysis. We give also an application example and a complete subcircuit description in PSpice notation (“.cir” file)
Keywords :
III-V semiconductors; SPICE; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; photodetectors; phototransistors; photovoltaic effects; semiconductor device models; GaAs; GaAs MESFET; PSpice circuit simulator; PSpice model; bias dependence; external photovoltaic effect; four-port PSpice subcircuit; illuminated GaAs MESFET; optical response modelling; photocurrent equations; photoresponse mechanisms; subcircuit description; Circuit simulation; Gallium arsenide; MESFET circuits; Optical polarization; Optical pumping; Photoconductivity; Photovoltaic effects; Regions; SPICE; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632888
