DocumentCode
1720822
Title
Two-dimensional modeling of on state voltage drop in IGBT
Author
Napoli, Ettore ; Strollo, Antonio G M ; Spirito, Paolo
Author_Institution
Dept. of Electron. Eng., Napoli Univ., Italy
Volume
2
fYear
1997
Firstpage
505
Abstract
In this paper a two-dimensional analysis of the on-state voltage drop for an IGBT, investigating the influence of the geometrical parameters of the device on current handling capabilities, is presented. Numerical simulations show that an optimal ratio between the cell dimension and the width of the epilayer region under the gate electrode exists. Furthermore, an analytical algorithm for the calculation of the two-dimensional carrier distribution in the epilayer region is proposed
Keywords
insulated gate bipolar transistors; power transistors; semiconductor device models; 2D carrier distribution; IGBT; cell dimension; current handling capabilities; epilayer region width; geometrical parameters; numerical simulation; on state voltage drop; two-dimensional modeling; Algorithm design and analysis; Analytical models; Electrodes; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Steady-state; Switching frequency; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632889
Filename
632889
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