Title :
The impact of modeling the overshooting effect in subthreshold region for Nanoscale CMOS inverter
Author :
Bani-Ahmed, Abedalsalam
Author_Institution :
Comput. Eng. Dept., Jordan Univ. of Sci. & Technol., Irbid, Jordan
Abstract :
Some aspects should be considered in Nanoscale MOSFETS models, such as power dissipation, channel length modulation, and the overshooting effect. In this paper we study the impact of considering the overshooting effect in a previous nanoscale model, by including the subthreshold region where the overshooting effect appears. Results show a positive impact of modeling the overshooting effect on the output transient response accuracy compared to HSPICE.
Keywords :
CMOS integrated circuits; logic gates; nanoelectronics; nanoscale CMOS inverter; output transient response accuracy; overshooting effect; Analytical models; CMOS integrated circuits; Computational modeling; Inverters; Mathematical model; Nanoscale devices; Semiconductor device modeling; Leakage current; Modeling CMOS; Nanoscale Technology; Overshooting effect; Subthreshold current;
Conference_Titel :
Innovations in Information Technology (IIT), 2011 International Conference on
Conference_Location :
Abu Dhabi
Print_ISBN :
978-1-4577-0311-9
DOI :
10.1109/INNOVATIONS.2011.5893845
