DocumentCode
1720876
Title
The impact of modeling the overshooting effect in subthreshold region for Nanoscale CMOS inverter
Author
Bani-Ahmed, Abedalsalam
Author_Institution
Comput. Eng. Dept., Jordan Univ. of Sci. & Technol., Irbid, Jordan
fYear
2011
Firstpage
342
Lastpage
345
Abstract
Some aspects should be considered in Nanoscale MOSFETS models, such as power dissipation, channel length modulation, and the overshooting effect. In this paper we study the impact of considering the overshooting effect in a previous nanoscale model, by including the subthreshold region where the overshooting effect appears. Results show a positive impact of modeling the overshooting effect on the output transient response accuracy compared to HSPICE.
Keywords
CMOS integrated circuits; logic gates; nanoelectronics; nanoscale CMOS inverter; output transient response accuracy; overshooting effect; Analytical models; CMOS integrated circuits; Computational modeling; Inverters; Mathematical model; Nanoscale devices; Semiconductor device modeling; Leakage current; Modeling CMOS; Nanoscale Technology; Overshooting effect; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Innovations in Information Technology (IIT), 2011 International Conference on
Conference_Location
Abu Dhabi
Print_ISBN
978-1-4577-0311-9
Type
conf
DOI
10.1109/INNOVATIONS.2011.5893845
Filename
5893845
Link To Document