DocumentCode :
1721045
Title :
Low leakage power SRAM cell for embedded memory
Author :
Mohammad, Baker
Author_Institution :
Technol. & Res., Khalifa Univ. of Sci., Abu Dhabi, United Arab Emirates
fYear :
2011
Firstpage :
367
Lastpage :
370
Abstract :
Leakage power becomes big percentage of total active power especially for small geometry CMOS technology. It is estimated that 20-50% of total average power during normal operation lost to leakage power. Leakage power is even more important for mobile devices where ideal time is long and battery life is important. This paper presents a low leakage SRAM cell and array architecture targeting high performance, low power embedded memory. The proposed novel 7-Transistor (7T) based memory provides 50% lower leakage power compare to 8T cell and 30% faster access time than traditional 6-Transistor (6T) SRAM cell with increased area of 20% compared to the compact 6T cell. All comparisons are based on 28nm foundry low power process technology.
Keywords :
SRAM chips; low-power electronics; transistors; 6-transistor SRAM cell; array architecture; embedded memory; low leakage power SRAM cell; low power embedded memory; low power process technology; novel 7-transistor; Arrays; CMOS integrated circuits; CMOS technology; Logic gates; Radio frequency; Random access memory; Variable speed drives; CMOS Memory Integrated Circuits; Low power VLSI circuit design; Register File; SRAM cell design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Innovations in Information Technology (IIT), 2011 International Conference on
Conference_Location :
Abu Dhabi
Print_ISBN :
978-1-4577-0311-9
Type :
conf
DOI :
10.1109/INNOVATIONS.2011.5893851
Filename :
5893851
Link To Document :
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