Microwave tunnelling in semiconductor heterostructures through a magnetic barrier

Author

Tarkhanian, Roland Hrairi

Author_Institution

Inst. of Radiophys. & Electron., Acad. of Sci., Ashtarak, Armenia

Volume

2

fYear

1997

Firstpage

623

Abstract

A new effect is considered-resonance tunneling of microwaves through a magnetic insulating barrier between a selectively doped semiconductor heterostructure and a thick wide-gap semiconductor layer. It is shown the tunneling is due to resonant excitation of coupled spin-electromagnetic surface waves localized at the interface between the magnetic and narrow-gap semiconductor layers. The total tunneling conditions are found for both s- and p-polarized incident waves. The influence of two-dimensional carriers on the microwave tunneling is investigated and coefficients of reflection and transmission are obtained. A new method for determination of 2D-carrier density is proposed

Keywords

antiferromagnetic resonance; carrier density; magnons; plasmons; polaritons; semiconductor heterojunctions; semiconductor-insulator-semiconductor structures; spin waves; surface electromagnetic waves; tunnelling; wide band gap semiconductors; 2D carrier density; coupled spin-electromagnetic surface waves; magnetic insulating barrier; microwave tunnelling; p-polarized incident waves; reflection coefficients; resonance tunneling; s-polarized incident waves; selectively doped semiconductor heterostructure; transmission coefficients; two-dimensional carriers; wide-gap semiconductor layer; Dielectrics; Electromagnetic coupling; Frequency; Insulation; Magnetic resonance; Magnetic semiconductors; Magnetic tunneling; Microwave propagation; Reflection; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International

Conference_Location

Natal

Print_ISBN

0-7803-4165-1

Type

conf

DOI

10.1109/SBMOMO.1997.648830

Filename

648830